Silicon ingots

We produce semiconductor grade silicon ingots with diameter from 2” up to 8” in quantity more than 200 000kg per year. Basic parameters of silicon ingots for semiconductor application: Growth metod CZ Type/Dopant N-type /Phosphorus or Antimony or Arsenic doped P-type /Boron doped Diameter from 2″ – to 8″ Orientation (100) or (111) or (110) Resistivity … Continue reading Silicon ingots →

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Silicon ingots